公开(公告)号：US10127984B2

公开(公告)日：2018-11-13

申请号：US15245164

申请日：2016-08-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangkwon Moon ,  Heewon Lee ,  Seongjun Ahn

IPC: G11C16/04 ,  G06F3/06 ,  G06F12/00

Abstract: Embodiments include a method of operating a storage device including a flash memory, comprising: calculating a reuse period of a selected memory block in the flash memory; determining a set of wordlines of the selected memory block for writing data based on the reuse period of the selected memory block; and writing the data into the set of wordlines.

公开(公告)号：US20140325122A1

公开(公告)日：2014-10-30

申请号：US14219608

申请日：2014-03-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Su-Gon KIM ,  Shine Kim ,  Seongjun Ahn

IPC: G06F3/06

CPC classification number: G06F1/206 ,  G11C7/04

Abstract: An operating method of a memory controller that controls a nonvolatile memory device is provided. A command is received from an external device. Whether the nonvolatile memory device is in a temperature control mode is determined. When the nonvolatile memory device is in the temperature control mode, the received command is delayed for a predetermined time until the received command is outputted to the nonvolatile memory device. When the nonvolatile memory device is in the temperature control mode, the nonvolatile memory device is in an idle state.

Abstract translation: 提供了一种控制非易失性存储器件的存储器控​​制器的操作方法。 从外部设备接收到命令。 确定非易失性存储器件是否处于温度控制模式。 当非易失性存储器件处于温度控制模式时，接收到的命令被延迟预定时间，直到所接收的命令被输出到非易失性存储器件。 当非易失性存储器件处于温度控制模式时，非易失性存储器件处于空闲状态。