公开(公告)号：US20250063726A1

公开(公告)日：2025-02-20

申请号：US18738410

申请日：2024-06-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Si Nyeon KIM ,  Seong Jae BYEON

IPC: H10B12/00

Abstract: A semiconductor memory device is provided. The semiconductor memory device includes a first bit line extending in a first direction on a substrate, a word line on the first bit line, and extending in a second direction intersecting the first direction, a first channel pattern between the first bit line and the word line, and extending along a first side wall of the word line and a first contact pattern on the first channel pattern, wherein in a cross-sectional view taken along the first channel pattern in the second direction, the first contact pattern includes a connecting part on the first channel pattern, and a protruding part which is connected to the connecting part, and extends along a side wall of the first channel pattern.