公开(公告)号：US10096603B2

公开(公告)日：2018-10-09

申请号：US15230585

申请日：2016-08-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Heejung Kim ,  Seok-Won Cho ,  Joonsoo Park ,  SoonMok Ha

IPC: H01L27/108 ,  H01L27/11582 ,  H01L49/02

Abstract: A method of fabricating a semiconductor device includes forming first cell patterns on a substrate, forming a first layer relative to the first cell patterns, and forming a second cell pattern and a peripheral pattern on the first layer. The second cell pattern includes first holes in a cell region and the peripheral pattern is located in a peripheral region. The method also includes filling the first holes, removing the second cell pattern to expose pillars, and forming second holes. Each of the second holes corresponds to adjacent cell spacers of the pillars. The method also includes removing the pillars to form third holes corresponding to respective ones of the cell spacers, and etching the substrate using the cell spacers, the first cell patterns, and the peripheral pattern as etch masks to form a trench.

公开(公告)号：US10290509B2

公开(公告)日：2019-05-14

申请号：US15443370

申请日：2017-02-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Nam-Gun Kim ,  Sangmin Lee ,  Sinhae Do ,  Seok-Won Cho ,  Taeseop Choi ,  Kon Ha

IPC: H01L21/311 ,  G03F7/20 ,  H01L21/033 ,  H01L21/308 ,  H01L27/108

Abstract: Example embodiments relate to a method for fabricating a semiconductor device. The method for fabricating a semiconductor device includes stacking on a substrate an etching target layer, a first mask layer, and a photoresist layer, irradiating extreme ultraviolet (EUV) radiation on the photoresist layer to form a photoresist pattern, patterning the first mask layer to form a first mask pattern using the photoresist pattern as an etching mask, and patterning the etching target layer to form a target pattern using the first mask pattern as an etching mask. The first mask layer includes at least one of a silicon layer and a titanium oxide layer.