公开(公告)号：US20220147582A1

公开(公告)日：2022-05-12

申请号：US17431366

申请日：2020-01-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Minkyung KIM ,  Sehun PARK ,  Youngkyun JUN

IPC: G06F16/953

Abstract: An electronic device includes a memory; and a processor configured to: store metadata received from a plurality of data sources, respectively, in the memory; obtain first information corresponding to a preset attribute from among attribute information comprised in first metadata received from a first data source from among the plurality of data sources; obtain second information corresponding to the preset attribute from among attribute information comprised in second metadata received from a second data source; and map, based on the first metadata and the second metadata being identified as metadata on a content based on a similarity between the first information and the second information, an integrated metadata generated based on the first metadata and the second metadata to the content and store the integrated metadata generated based on the first metadata and the second metadata in the memory.

公开(公告)号：US20230157022A1

公开(公告)日：2023-05-18

申请号：US17986371

申请日：2022-11-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keunwook SHIN ,  Changhyun KIM ,  Sehun PARK ,  Hyunwoo KIM ,  Kyung-Eun BYUN ,  Dongjin YUN ,  Changseok LEE

IPC: H01L27/11582 ,  G06N3/063

CPC classification number: H01L27/11582 ,  G06N3/0635

Abstract: A vertical nonvolatile memory device may include a channel layer extending in a first direction; a plurality of gate electrodes and a plurality of spacers each extending in a second direction crossing the first direction, the plurality of gate electrodes and the plurality of spacers being alternately arranged with each other in the first direction; and a gate insulating layer extending in the first direction between the channel layer and the plurality of gate electrodes. Each of the plurality of gate electrodes may include a metal-doped graphene.