公开(公告)号：US20250140711A1

公开(公告)日：2025-05-01

申请号：US18816266

申请日：2024-08-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byounghoon KIM ,  Jihwan SEO ,  Sangsu JEONG ,  Sungsik PARK ,  Giseok SONG ,  Hyunju SONG

IPC: H01L23/544 ,  H01L23/528 ,  H01L29/06 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

Abstract: A semiconductor device may include a substrate including a logic cell region and a key region, an active pattern in the logic cell region, a channel pattern on the active pattern, a plurality of gate electrodes extending on the channel pattern in a first direction and spaced apart from each other in a second direction perpendicular to the first direction, a device separation layer on the key region, and a first key pattern corresponding to the plurality of gate electrodes on the device separation layer.