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公开(公告)号：US20190267333A1
公开(公告)日：2019-08-29
申请号：US16106112
申请日：2018-08-21
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sang Jun HONG , Kyeong Jin PARK
IPC: H01L23/58 , H01L27/12 , H01L27/115
Abstract: Semiconductor memory devices are provided. A semiconductor memory device includes a cell array region including stacked structures and a word line cut region that extends between the stacked structures. Moreover, the semiconductor memory device includes a peripheral circuit region in a stack with the cell array region and including a support pattern.
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