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公开(公告)号：US20210181628A1
公开(公告)日：2021-06-17
申请号：US16947515
申请日：2020-08-05
Applicant: Samsung Electronics Co., Ltd.
Inventor： THANH CUONG NGUYEN , DAEKEON KIM , TSUNEHIRO NISHI , NAOTO UMEZAWA , HYUNWOO KIM
IPC: G03F7/004 , C07C25/13 , G03F7/038 , G03F7/039 , H01L21/027
Abstract: Disclosed are resist compositions and semiconductor device fabrication methods using the same. The resist composition comprises a hypervalent iodine compound of Chemical Formula 1 below. Wherein R1 to R7 are as defined herein.
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