公开(公告)号：US20240234094A9

公开(公告)日：2024-07-11

申请号：US18232123

申请日：2023-08-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changho KIM ,  Hyeongmo KANG ,  Illsang KO ,  Dooyoung GWAK ,  Kyungsun KIM ,  Namkyun KIM ,  Yirop KIM ,  Jihwan KIM ,  Seungbo SHIM ,  Minyoung HUR

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32128 ,  H01J37/32165 ,  H01J37/3244 ,  H01J2237/334

Abstract: Provided is a plasma control method including applying gas to a chamber having a wafer loaded therein, generating plasma by applying both radio frequency (RF) power associated with a first voltage at a first frequency and a second voltage at a second frequency that is lower than the first frequency to the chamber for a first time, cutting off the RF power after the first time elapses, continuously applying the second voltage of the second frequency to the chamber for a second time, cutting off the second voltage after the second time elapses, continuously maintaining an off state of the RF power and an off state of the voltage for a third time, and performing an etching process on the wafer by using the plasma formed by the RF power and the second voltage after the third time elapses, wherein the RF power is a sine wave, and the second voltage is a square wave of a periodic pulse form.

公开(公告)号：US20230010881A1

公开(公告)日：2023-01-12

申请号：US17591751

申请日：2022-02-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byeongsang KIM ,  Dougyong SUNG ,  Sungjin KIM ,  Yunhwan KIM ,  Inseok SEO ,  Seungbo SHIM ,  Naohiko OKUNISHI ,  Minyoung HUR

IPC: G01R27/16 ,  H01L21/683 ,  H01L21/67 ,  C23C16/52 ,  H01L21/66 ,  C23C16/455

Abstract: An impedance measurement jig may include a first contact plate, a second contact plate, a cover plate, a plug, and an analyzer. The first contact plate may make electrical contact with an ESC in a substrate-processing apparatus. The second contact plate may make electrical contact with a focus ring configured to surround the ESC. The cover plate may be configured to cover an upper surface of the substrate-processing apparatus. The plug may be installed at the cover plate to selectively make contact with the first contact plate or the second contact plate. The analyzer may individually apply a power to the first contact plate and the second contact plate through the plug to measure an impedance of the ESC and an impedance of the focus ring. Thus, the impedances of the ESC and the focus ring may be individually measured to inspect the ESC and/or the focus ring.

公开(公告)号：US20230084124A1

公开(公告)日：2023-03-16

申请号：US17991024

申请日：2022-11-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yonghee KIM ,  Byunghun HAN ,  Hyeongmo KANG ,  Donghyeon NA ,  Dougyong SUNG ,  Seungbo SHIM ,  Minjae LEE ,  Myungsun CHOI ,  Minyoung HUR

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/3065 ,  H03H7/38

Abstract: A plasma etching method and a semiconductor device fabrication method, the plasma etching method including providing a source power having a first single pulse to an electrostatic chuck in order to generate a plasma on a substrate; providing a first bias power having a burst pulse different from the first single pulse to concentrate the plasma on the substrate; and providing a second bias power having a second single pulse the same as the first single pulse to accelerate the plasma toward the substrate.

公开(公告)号：US20200373126A1

公开(公告)日：2020-11-26

申请号：US16870186

申请日：2020-05-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Donghyeon NA ,  Hyosin KIM ,  Seungbo SHIM ,  Hadong JIN ,  Dougyong SUNG ,  Minyoung HUR

IPC: H01J37/32

Abstract: A plasma control apparatus for controlling plasma to be uniformly distributed in a plasma chamber and a plasma processing system including the same are provided. The plasma control apparatus includes a transmission line configured to deliver radio frequency (RF) power to a plasma chamber through at least two frequencies, a matching circuit configured to control impedance for maximum delivery of the RF power, and a plasma control circuit configured to selectively and independently control harmonics at a very high frequency (VHF) among the at least two frequencies and to control plasma distribution in the plasma chamber by producing resonance for the harmonics.

公开(公告)号：US20200161157A1

公开(公告)日：2020-05-21

申请号：US16456757

申请日：2019-06-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yongwoo LEE ,  Youngjin NOH ,  Myungsun CHOI ,  Minyoung HUR ,  Seungbo SHIM ,  Jaehak LEE

IPC: H01L21/683 ,  H01L21/3065 ,  H01J37/32

Abstract: Electrostatic chucks, plasma processing apparatuses, and methods of fabricating semiconductor devices using the same are provided. The electrostatic chuck includes a chuck base, an upper plate provided on the chuck base, and an inner plate provided between the chuck base and the upper plate. A first diameter of the inner plate is less than a second diameter of the upper plate.

公开(公告)号：US20250146917A1

公开(公告)日：2025-05-08

申请号：US19018240

申请日：2025-01-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yoonbum NAM ,  Namkyun KIM ,  Seungbo SHIM ,  Donghyeon NA ,  Naohiko OKUNISHI ,  Dongseok HAN ,  Minyoung HUR ,  Byeongsang KIM ,  Kuihyun YOON

IPC: G01N9/24 ,  H01Q1/40 ,  H01Q9/30

Abstract: An apparatus for measuring parameters of plasma includes a cutoff probe. The cutoff probe includes: a first antenna having a line shape and configured to emit a microwave to the plasma in response to the signal provided by at least one processor; a second antenna having a line shape and configured to generate an electrical signal in response to receiving the microwave emitted by the first antenna and transferred through the plasma; a first insulating layer; a second insulating layer; a first shield; a second shield; an end protection layer covering an end of each of the first insulating layer, the second insulating layer, the first shield, and the second shield; a first antenna protection layer, of insulating nature, covering the first antenna; and a second antenna protection layer, of insulating nature, covering the second antenna.

公开(公告)号：US20240136155A1

公开(公告)日：2024-04-25

申请号：US18232123

申请日：2023-08-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changho KIM ,  Hyeongmo KANG ,  Illsang KO ,  Dooyoung GWAK ,  Kyungsun KIM ,  Namkyun KIM ,  Yirop KIM ,  Jihwan KIM ,  Seungbo SHIM ,  Minyoung HUR

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32128 ,  H01J37/32165 ,  H01J37/3244 ,  H01J2237/334

Abstract: Provided is a plasma control method including applying gas to a chamber having a wafer loaded therein, generating plasma by applying both radio frequency (RF) power associated with a first voltage at a first frequency and a second voltage at a second frequency that is lower than the first frequency to the chamber for a first time, cutting off the RF power after the first time elapses, continuously applying the second voltage of the second frequency to the chamber for a second time, cutting off the second voltage after the second time elapses, continuously maintaining an off state of the RF power and an off state of the voltage for a third time, and performing an etching process on the wafer by using the plasma formed by the RF power and the second voltage after the third time elapses, wherein the RF power is a sine wave, and the second voltage is a square wave of a periodic pulse form.

公开(公告)号：US20210104382A1

公开(公告)日：2021-04-08

申请号：US16891157

申请日：2020-06-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yonghee KIM ,  Byunghun HAN ,  Hyeongmo KANG ,  Donghyeon NA ,  Dougyong SUNG ,  Seungbo SHIM ,  Minjae LEE ,  Myungsun CHOI ,  Minyoung HUR

IPC: H01J37/32 ,  H03H7/38 ,  H01L21/683 ,  H01L21/3065

Abstract: A plasma etching method and a semiconductor device fabrication method, the plasma etching method including providing a source power having a first single pulse to an electrostatic chuck in order to generate a plasma on a substrate; providing a first bias power having a burst pulse different from the first single pulse to concentrate the plasma on the substrate; and providing a second bias power having a second single pulse the same as the first single pulse to accelerate the plasma toward the substrate.