公开(公告)号：US11410026B2

公开(公告)日：2022-08-09

申请号：US16191906

申请日：2018-11-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Woo-Yeong Cho ,  Seong-Il O ,  Hak-Soo Yu ,  Min-Su Choi

IPC: G06N3/063 ,  G06N3/04 ,  H01L27/24 ,  H01L25/065 ,  G06F15/163

Abstract: Provided are a neuromorphic circuit having a three-dimensional stack structure and a semiconductor device including the neuromorphic circuit. The semiconductor device includes a first semiconductor layer including one or more synaptic cores, each synaptic core including neural circuits arranged to perform neuromorphic computation. A second semiconductor layer is stacked on the first semiconductor layer and includes an interconnect forming a physical transfer path between synaptic cores. A third semiconductor layer is stacked on the second semiconductor layer and includes one or more synaptic cores. At least one through electrode is formed, through which information is transferred between the first through third semiconductor layers. Information from a first synaptic core in the first semiconductor layer is transferred to a second synaptic core in the third semiconductor layer via the one of more through electrodes and an interconnect of the second semiconductor layer.

公开(公告)号：US11043397B2

公开(公告)日：2021-06-22

申请号：US16509792

申请日：2019-07-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myeong-Dong Lee ,  Min-Su Choi ,  Jun-Hyeok Ahn ,  Sung-Hee Han ,  Ce-Ra Hong

IPC: H01L21/3213 ,  H01L27/108 ,  H01L21/033

Abstract: First and second mask layers are formed on a target layer. The second mask layer is patterned to form second mask patterns each of which having a rhomboid shape with a first diagonal length and a second diagonal length. A trimming process is performed on the second mask patterns to form second masks by etch. First portions of first opposite vertices of each second mask pattern are etched more than second portions of second opposite vertices of each second mask pattern. A first diagonal length between the first opposite vertices is greater than a second diagonal length between the second opposite vertices. The first mask layer is patterned to form first masks by etching the first mask layer using the second masks as an etching mask. The target layer is patterned to form target patterns by etching the target layer using the first masks as an etching mask.