专利检索 ap:("Samsung Electronics Co., Ltd.") AND inv:"Min Yeol Ha" 第 1 页

1.

发明授权
One time programmable memory cell (OTP) including main OTP cell transistor, redundant OTP transistor, and access transistor 有权

公开(公告)号：US10885997B2

公开(公告)日：2021-01-05

申请号：US16515287

申请日：2019-07-18

申请人： Samsung Electronics Co., Ltd.

发明人： Min Yeol Ha

IPC分类号： G11C17/16 , G11C17/18 , G11C29/00

摘要： A one-time programmable (OTP) memory cell, and an OTP memory and a memory system including the same may be provided. The OTP memory cell includes a main OTP cell transistor, a redundant OTP cell transistor, and an access transistor that are connected in series between a first node in a floating state and a second node. The OTP memory cell is configured to apply a program voltage to gates of the main OTP cell transistor and the redundant OTP cell transistor, and a program access voltage lower than the program voltage to a gate of the access transistor, during a program operation.