公开(公告)号：US20230132893A1

公开(公告)日：2023-05-04

申请号：US17841734

申请日：2022-06-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Mijin Kwon ,  Sangchul Yeo

IPC: G03F1/36 ,  G06T7/00 ,  G03F1/70 ,  G06F16/51

Abstract: A reliable mask layout correction method capable of manufacturing a mask including a curvilinear pattern, and a mask manufacturing method including the correction method. The mask layout correction method based on machine learning may include: acquiring optical proximity correction (OPC)-ed layout images for masks including a curvilinear pattern, extracting mask contour images from scanning electron microscope (SEM) images for masks manufactured based on the OPC-ed layout images, performing machine learning using the OPC-ed layout images and the mask contour images to generate a conversion model, and correcting the OPC-ed layout images using the conversion model.