公开(公告)号：US20250107180A1

公开(公告)日：2025-03-27

申请号：US18755008

申请日：2024-06-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyunghee CHO ,  Byungho MOON ,  Donghoon HWANG

IPC: H01L29/06 ,  H01L21/822 ,  H01L21/8238 ,  H01L27/06 ,  H01L27/092 ,  H01L29/08 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/786

Abstract: Provided is an integrated circuit device including a base substrate layer, a sheet separation wall extending on the base substrate layer in a first horizontal direction, a pair of nanosheet stacked structures including the sheet separation wall therebetween and apart from each other in a second horizontal direction, the second horizontal direction different from the first horizontal direction, the pair of nanosheet stacked structures each including a plurality of nanosheets, a plurality of cladding patterns between a first end of each of the plurality of nanosheets included in each of the pair of nanosheet stacked structures and the sheet separation wall, and a pair of gate electrodes extending on the pair of nanosheet stacked structures in the second horizontal direction.