公开(公告)号：US20240421058A1

公开(公告)日：2024-12-19

申请号：US18644867

申请日：2024-04-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minkyu KIM ,  Dahee KIM ,  Khaile KIM ,  Kyuil HWANG

IPC: H01L23/498 ,  H01L21/48 ,  H01L23/00 ,  H01L23/538

Abstract: A semiconductor package may include a package structure on a redistribution structure. The redistribution structure may include a wiring structure and an insulating structure covering the wiring structure. The package structure may include a semiconductor chip connected to the wiring structure. The insulating structure of the redistribution structure may include a plurality of first insulating layers and a second insulating layer between the plurality of first insulating layers. The plurality of first insulating layers may include at least one of a first conductive line pattern and a first conductive via pattern. The second insulating layer may include a second conductive line pattern overlapping the first conductive line pattern in a vertical direction.

公开(公告)号：US20250038094A1

公开(公告)日：2025-01-30

申请号：US18650361

申请日：2024-04-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joongsun KIM ,  Minkyu KIM ,  Jeongrim SEO ,  Wonjae LEE ,  Kyuil HWANG

IPC: H01L23/498 ,  H01L23/00 ,  H01L23/31 ,  H01L23/367 ,  H01L23/49 ,  H01L25/16

Abstract: A semiconductor package includes a first redistribution structure comprising a plurality of first redistribution layers. A second redistribution structure is above the first redistribution structure. The second redistribution structure comprises a plurality of second redistribution layers. A first semiconductor chip is on the first redistribution structure and is arranged between the first redistribution structure and the second redistribution structure. A conductive block directly contacts the first redistribution structure and the second redistribution structure and extends in a horizontal direction between the first redistribution structure and the second redistribution structure. A plurality of conductive posts is around the first semiconductor chip and the conductive block. The plurality of conductive posts extends in a vertical direction and directly contacts the first redistribution structure and the second redistribution structure.