公开(公告)号：US20240114679A1

公开(公告)日：2024-04-04

申请号：US18538358

申请日：2023-12-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin Won MA ,  Ja Min KOO ,  Dae Young MOON ,  Kyu Wan KIM ,  Bong Hyun KIM ,  Young Seok KIM

IPC: H10B12/00

CPC classification number: H10B12/485 ,  H10B12/37

Abstract: A semiconductor memory device includes a substrate including an element separation film and an active region defined by the element separation film, a bit line structure on the substrate, a trench in the element separation film and the active region, the trench on at least one side of the bit line structure and including a first portion in the element separation film and a second portion in the active region, a bottom face of the first portion placed above a bottom face of the second portion, a single crystal storage contact filling the trench, and an information storage element electrically connected to the single crystal storage contact.

公开(公告)号：US20220037335A1

公开(公告)日：2022-02-03

申请号：US17355451

申请日：2021-06-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin Won MA ,  Ja Min KOO ,  Dae Young MOON ,  Kyu Wan KIM ,  Bong Hyun KIM ,  Young Seok KIM

IPC: H01L27/108

Abstract: A semiconductor memory device includes a substrate including an element separation film and an active region defined by the element separation film, a bit line structure on the substrate, a trench in the element separation film and the active region, the trench on at least one side of the bit line structure and including a first portion in the element separation film and a second portion in the active region, a bottom face of the first portion placed above a bottom face of the second portion, a single crystal storage contact filling the trench, and an information storage element electrically connected to the single crystal storage contact.