公开(公告)号：US20250149452A1

公开(公告)日：2025-05-08

申请号：US19008197

申请日：2025-01-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinsub KIM ,  Kyoung-hee KIM ,  Munjun KIM ,  Jun Kwan KIM ,  Woo Choel NOH

IPC: H01L23/532 ,  H01L21/768 ,  H01L23/522 ,  H10B12/00

Abstract: A semiconductor device includes a substrate including a cell array region and a peripheral circuit region, capacitors on the cell array region of the substrate, peripheral transistors on the peripheral circuit region of the substrate, a first upper interlayer insulating layer on the capacitors and the peripheral transistors, a first upper contact electrically connected to at least one of the peripheral transistors, the first upper contact penetrating the first upper interlayer insulating layer, a first upper interconnection line provided on the first upper interlayer insulating layer and electrically connected to the first upper contact, a second upper interlayer insulating layer covering the first upper interconnection line, and a first blocking layer between the first upper interlayer insulating layer and the second upper interlayer insulating layer. The first blocking layer is absent between the first upper interconnection line and the first upper interlayer insulating layer.