公开(公告)号：US20250103216A1

公开(公告)日：2025-03-27

申请号：US18665884

申请日：2024-05-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwangjin LEE ,  Kirock KWON

IPC: G06F3/06

Abstract: A storage device includes a memory device including a plurality of memory blocks, a temperature sensor measuring an internal temperature of the storage device, and a controller, wherein the temperature sensor measures a program temperature at a point in time of programming data in the plurality of memory blocks, and the controller stores the program temperature of program memory blocks, wherein the controller determines at least one memory block failed to read the data programmed in the plurality of memory blocks, when the program temperature of the error block and a read attempt temperature fall within a driving guarantee temperature range, and the controller is configured to calculate a difference in temperature between the program temperature of the error block and the read attempt temperature, compares the difference in temperature and a guarantee magnitude, to register the error block as a bad block or a refresh candidate block.

公开(公告)号：US20250085866A1

公开(公告)日：2025-03-13

申请号：US18885281

申请日：2024-09-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Taejin PARK ,  Kirock KWON

IPC: G06F3/06

Abstract: A storage device includes nonvolatile memory including a plurality of memory blocks in any one of a user area, a reserved area, and an over-provisioning (OP) area; and a storage controller configured to perform a bad block management operation on the plurality of memory blocks, wherein the storage controller is further configured to: based on a memory block in the user area being detected as a bad block, determine whether a number of bad blocks is greater than a maximum number of bad blocks, and based on the number of bad blocks being greater than the maximum number of bad blocks, decrease a capacity of the user area based on a use ratio of the user area and maintain an OP capacity of the OP area as it is.