公开(公告)号：US20140084379A1

公开(公告)日：2014-03-27

申请号：US14092016

申请日：2013-11-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yongkuk Jeong ,  Hyun-Kwan Yu ,  Kieun Kim

IPC: H01L27/092

CPC classification number: H01L27/0922 ,  H01L21/3003 ,  H01L21/823807 ,  H01L21/823828 ,  H01L29/1054 ,  H01L29/66651 ,  H01L29/7843

Abstract: A semiconductor device is fabricated by providing a substrate including a silicon channel layer and a silicon-germanium channel layer, forming gate structures disposed on the silicon channel layer and on the silicon-germanium channel layer, forming a first protection layer to cover the resultant structure including the gate structures, and injecting hydrogen and/or its isotopes into the silicon-germanium channel layer. The silicon and silicon-germanium channel layers may be oriented along a direction. Related devices are also described.

Abstract translation: 通过提供包括硅沟道层和硅 - 锗沟道层的衬底来制造半导体器件，形成设置在硅沟道层和硅 - 锗沟道层上的栅极结构，形成第一保护层以覆盖所得结构 包括栅极结构，以及将氢和/或其同位素注入到硅 - 锗通道层中。 硅和硅 - 锗沟道层可以沿<100>方向取向。 还描述了相关设备。