公开(公告)号：US10468092B2

公开(公告)日：2019-11-05

申请号：US16288626

申请日：2019-02-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki-ho Hyun ,  Kyo-min Sohn ,  Je-min Ryu ,  Ho-Seok Seol

IPC: G11C11/408 ,  G11C11/406 ,  G11C11/4093

Abstract: A memory device includes a memory cell array that includes a plurality of memory cell rows; and a refresh address generator configured to store flags respectively corresponding to the plurality of memory cell rows, generate refresh row addresses respectively corresponding to the plurality of memory cell rows by performing a count operation, and according to the flags, change a refresh period of the plurality of memory cell rows.