公开(公告)号：US10229831B2

公开(公告)日：2019-03-12

申请号：US15656305

申请日：2017-07-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngjo Tak ,  Sammook Kang ,  Mihyun Kim ,  Junyoun Kim

IPC: H01L21/02

Abstract: A method of fabricating a nitride semiconductor substrate including forming a buffer layer on a surface of a growth substrate, growing a first nitride semiconductor layer on the buffer layer, growing a second nitride semiconductor layer on the first nitride semiconductor layer, and removing the growth substrate may be provided. The forming a buffer layer may deform the surface of the growth substrate to have a convex shape. The forming a buffer layer and the growing a first nitride semiconductor layer may be performed within a first process chamber. The growing a second nitride semiconductor layer and the removing the growth substrate may be performed within a second process chamber.