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    IMAGE SENSOR CONTROLLING A CONVERSION GAIN, IMAGING DEVICE HAVING THE SAME, AND METHOD OF OPERATING THE SAME
    1.
    发明申请
    IMAGE SENSOR CONTROLLING A CONVERSION GAIN, IMAGING DEVICE HAVING THE SAME, AND METHOD OF OPERATING THE SAME 有权

    公开(公告)号：US20220224849A1

    公开(公告)日：2022-07-14

    申请号：US17711809

    申请日：2022-04-01

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jungbin Yun ,  Hwanwoong Kim ,  Eunsub Shim ,  Kyungho Lee ,  Hongsuk Lee

    IPC: H04N5/355 ,  H04N5/343 ,  H04N5/369 ,  H04N5/374

    Abstract: Provided is an image sensor including a first pixel including a first floating diffusion region and a second floating diffusion region, a second pixel including a first floating diffusion region, a second floating diffusion region, and a third floating diffusion region, a third pixel including a first floating diffusion region and a second floating diffusion region, and a fourth pixel including a first floating diffusion region, a second floating diffusion region, and a third floating diffusion region, wherein the second floating diffusion region of the first pixel and the second floating diffusion region of the second pixel are connected through a first metal line, and wherein the third floating diffusion region of the second pixel and the third floating diffusion region of the third pixel are connected through a second metal.

    Light sensing circuit and image sensor including the same
    2.
    发明授权
    Light sensing circuit and image sensor including the same 有权

    公开(公告)号：US11330201B2

    公开(公告)日：2022-05-10

    申请号：US16670216

    申请日：2019-10-31

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Seungjoon Lee ,  Jungbin Yun ,  Younghwan Park ,  Jeongjin Cho

    IPC: H04N5/335 ,  H04N5/343 ,  H01L27/146

    Abstract: A light sensing circuit and an image sensor are provided. The image sensor includes a first pixel unit including a plurality of first photodiodes and a first driving circuit to generate a first pixel signal based on an amount of charges stored in the plurality of first photodiodes, a second pixel unit including a plurality of second photodiodes and a second driving circuit to generate a second pixel signal based on an amount of charges stored in the plurality of second photodiodes, and a switching circuit connected to the first driving circuit through a first diffusion node and connected to the second driving circuit through a second diffusion node. The switching circuit connects or disconnects the first diffusion node and the second diffusion node based on a mode selection signal.

    IMAGE SENSOR
    4.
    发明公开
    IMAGE SENSOR 审中-公开

    公开(公告)号：US20240128287A1

    公开(公告)日：2024-04-18

    申请号：US18374343

    申请日：2023-09-28

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sanghyuck Moon ,  Jueun Park ,  Hyuncheol Kim ,  Jungbin Yun ,  Seungjoon Lee ,  Taesub Jung

    IPC: H01L27/146

    CPC classification number: H01L27/1461 ,  H01L27/14645 ,  H01L27/14689

    Abstract: An image sensor including a substrate, at least one transfer gate on a top surface of the substrate, a floating diffusion region located in the substrate and disposed apart from the at least one transfer gate in a first direction, the first direction being parallel to the top surface of the substrate, an intrinsic semiconductor region located in the substrate and disposed between the at least one transfer gate and the floating diffusion region in the first direction, and a photoelectric conversion region located in the substrate and disposed apart from the floating diffusion region in a second direction, wherein the second direction is perpendicular to the first direction, and wherein the intrinsic semiconductor region is an undoped region.

    Image sensors
    5.
    发明授权
    Image sensors 有权

    公开(公告)号：US11721713B2

    公开(公告)日：2023-08-08

    申请号：US17543967

    申请日：2021-12-07

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Seungjoon Lee ,  Kyungho Lee ,  Jungbin Yun ,  Junghyung Pyo

    IPC: H01L27/146 ,  H01L27/148 ,  H04N23/67 ,  H04N25/75

    CPC classification number: H01L27/14627 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14645 ,  H01L27/14831 ,  H04N23/67 ,  H04N25/75

    Abstract: An image sensor includes a pixel array including a plurality of pixel groups, each of the plurality of pixel groups including a plurality of unit pixels and sharing a single microlens, the plurality of unit pixels in each of the plurality of pixel groups including color filters of the same color, and a control logic configured to group the plurality of unit pixels of each of the plurality of pixel groups into a plurality of subgroups and to drive the pixel array for each subgroup. The plurality of subgroups include a first subgroup and a second subgroup. The control logic may be configured to obtain first image data corresponding to the first subgroup and second image data corresponding to the second subgroup, and the first subgroup and the second subgroup are provided with at least one unit pixel therebetween in the first direction or the second direction.

    IMAGE SENSOR
    7.
    发明公开
    IMAGE SENSOR 审中-公开

    公开(公告)号：US20230207583A1

    公开(公告)日：2023-06-29

    申请号：US17946271

    申请日：2022-09-16

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Yunhyeok KIM ,  Jungbin Yun ,  Hongsuk Lee

    IPC: H01L27/146 ,  H04N5/369

    CPC classification number: H01L27/14607 ,  H04N5/369 ,  H01L27/14645

    Abstract: An image sensor includes: a pixel array including a plurality of pixels; and a logic circuit acquiring a pixel signal from the plurality of pixels, wherein each of the plurality of pixels includes a photodiode and a pixel circuit region disposed on the photodiode, wherein the pixel array includes a plurality of pixel groups each having four or more pixels, among the plurality of pixels, adjacent to each other in the first direction and the second direction, wherein the pixel circuit region in each of the plurality of pixel groups includes a plurality of transistors, wherein at least one of the plurality of transistors is a driving transistor including a first active region, a second active region, and a gate structure disposed between the first active region and the second active region in a third direction intersecting the first direction and the second direction.

    Pixel group and pixel array of image sensor
    8.
    发明授权
    Pixel group and pixel array of image sensor 有权

    公开(公告)号：US11637137B2

    公开(公告)日：2023-04-25

    申请号：US17392925

    申请日：2021-08-03

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Seungjoon Lee ,  Kyungho Lee ,  Jungbin Yun ,  Jihun Kim

    IPC: H01L27/146 ,  H01L27/148 ,  H04N5/355

    Abstract: A pixel group of an image sensor includes first through fourth unit pixels in a matrix form of two pixels rows and two pixel columns, and a common floating diffusion region in a semiconductor substrate at a center of the pixel group and shared by the first through fourth unit pixels. Each of the first through fourth unit pixels includes a photoelectric conversion element in the semiconductor substrate, and a pair of vertical transfer gates in the semiconductor substrate and extending in a vertical direction perpendicular to a surface of the semiconductor substrate. The pair of vertical transfer gates transfer photo charges collected by the photoelectric conversion element to the common floating diffusion region. Image quality is enhanced by increasing sensing sensitivity of the unit pixel through the shared structure of the floating diffusion region and the symmetric structure of the vertical transfer gates.

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