公开(公告)号：US20200304742A1

公开(公告)日：2020-09-24

申请号：US16898870

申请日：2020-06-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-bin YUN ,  Kyung-ho LEE

IPC: H04N5/376 ,  H04N9/04 ,  H04N9/07 ,  H01L27/146 ,  H04N5/374 ,  H04N5/3745

Abstract: An image sensor may optimize control of each pixel and/or each photodiode therein according to various pixel structures therein. An electronic apparatus may include the image sensor. The image sensor may include a plurality of pixels, each including a photodiode and a transfer transistor configured to transfer charges accumulated in the photodiode to a floating diffusion floating diffusion region, and transfer transistor lines respectively connected to gate electrodes of the transfer transistors of the pixels. The transfer transistor lines may receive voltages having different magnitudes.