公开(公告)号：US20140033325A1

公开(公告)日：2014-01-30

申请号：US14043306

申请日：2013-10-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bo-Gyeong KANG ,  Jung-Wan KO ,  Byung-Rae LEE

IPC: G06F21/62

CPC classification number: G06F21/6218 ,  G06F12/1466 ,  G06F21/10 ,  G06F21/44 ,  G06F21/73 ,  G06F2221/2103 ,  G11B20/00086 ,  G11B20/00115 ,  G11B20/00166 ,  G11B20/00181 ,  G11B20/0021 ,  G11B20/00913 ,  H04L9/0656 ,  H04L63/067 ,  H04L63/0876 ,  H04L2209/08 ,  H04L2209/34 ,  H04L2209/60

Abstract: A method and a non-volatile memory apparatus for cloning prevention is provided. The non-volatile memory apparatus includes an Enhanced Media Identification (EMID) area, which is located in a specific area of the non-volatile memory, and stores an identification for identifying the non-volatile memory; and an EMID encoder for modifying the identification by a preset operation in conjunction with an arbitrary value, wherein the EMID area includes a first area in which reading by an external device is prevented, and a second area in which reading from the non-volatile memory by the external device is permitted in response to a read command.

Abstract translation: 提供了用于克隆预防的方法和非易失性存储装置。 非易失性存储装置包括位于非易失性存储器的特定区域中的增强媒体识别（EMID）区域，并存储用于识别非易失性存储器的标识符; 以及EMID编码器，用于结合任意值通过预设操作修改识别，其中EMID区域包括其中防止外部设备进行读取的第一区域和其中从非易失性存储器进行读取的第二区域 允许外部设备响应读命令。