公开(公告)号：US20240136234A1

公开(公告)日：2024-04-25

申请号：US18380691

申请日：2023-10-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Mingyoo CHOI ,  Jinsun Kim ,  Seunghak Park ,  Jongsu Park ,  Sunkak Jo

IPC: H01L21/66 ,  H01L21/311

CPC classification number: H01L22/12 ,  H01L21/31116

Abstract: A method of measuring an overlay offset, the method includes: providing a substrate including a lower pattern and an upper pattern, wherein the lower pattern is disposed in a cell area, and the upper pattern is disposed on the lower pattern; acquiring a first piece of overlay information about a first position of the lower pattern and a second position of the upper pattern by detecting a pupil image of a joint position that is between the upper pattern and the lower pattern; detecting an overlay offset of the second position of the upper pattern relative to the first position of the lower pattern through Zernike polynomial modeling; and acquiring compensation overlay information on the upper pattern from the overlay offset of the second position, wherein the overlay offset includes a radial tilting component.

公开(公告)号：US20220189823A1

公开(公告)日：2022-06-16

申请号：US17404136

申请日：2021-08-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yongmin Kim ,  Moonjong Kang ,  Miyoun Kim ,  Sungil Moon ,  Jongsu Park ,  Heonju Lee ,  Sunkak Jo

IPC: H01L21/768 ,  H01L21/311 ,  H01L27/11582 ,  H01L27/11575

Abstract: According to example embodiments, a method of manufacturing a semiconductor device is provided. The method includes forming an etching target layer on a substrate; forming a first photoresist layer on the etching target layer; forming a first alignment key under the first photoresist layer and a first alignment pattern aligned in a first direction perpendicular to a top surface of the substrate, by exposing and developing the first photoresist layer; forming a second alignment key under the first photoresist layer and a second alignment pattern aligned in the first direction, by exposing and developing the first photoresist layer; and forming a third alignment key aligned with the first alignment key in the first direction under the first photoresist layer and a fourth alignment key aligned with the second alignment key in the first direction on the etching target layer based on the first and second alignment patterns.