公开(公告)号：US20220336358A1

公开(公告)日：2022-10-20

申请号：US17713559

申请日：2022-04-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seyong OH ,  Kihyun KIM ,  Jihwan YOU

IPC: H01L23/535 ,  H01L27/11582 ,  H01L27/11573

Abstract: A semiconductor device and a data storage system including the same are provided. The semiconductor device includes a lower structure including a semiconductor substrate, a circuit element on the semiconductor substrate, a circuit interconnection structure on the semiconductor substrate, the circuit interconnection structure including a plurality of connection patterns on different levels and electrically connected to the circuit element, and a lower insulating structure covering the circuit element and the circuit interconnection structure; and an upper structure including an upper substrate in contact with an upper surface of the lower insulating structure, a stack structure on the upper substrate, the stack structure including interlayer insulating layers and gate electrodes alternately stacked in a vertical direction, and a vertical memory structure penetrating through the stack structure in the vertical direction.