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公开(公告)号：US20230303924A1
公开(公告)日：2023-09-28
申请号：US18204465
申请日：2023-06-01
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jihyun MIN , Soo Kyung KWON , Seon-Yeong KIM , Yong Wook KIM , Ji-Yeong KIM , Eun Joo JANG , Sungwoo HWANG
IPC: C09K11/88 , C09K11/02 , H10K50/115 , H10K59/38
CPC classification number: C09K11/883 , C09K11/02 , H10K50/115 , H10K59/38 , G02F2202/36 , B82Y40/00
Abstract: A quantum dot including a core and a shell disposed on an outer surface of the core. The core includes a first semiconductor nanocrystal including a Group II-VI compound. The shell includes a second semiconductor nanocrystal. An effective mass of the second semiconductor nanocrystal is about 0.5 times to about 2.0 times an effective mass of the first semiconductor nanocrystal and the quantum dot does not include cadmium, lead, mercury, or a combination thereof.
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2.发明公开公开(公告)号：US20230374379A1
公开(公告)日：2023-11-23
申请号：US18229709
申请日：2023-08-03
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Garam PARK , Tae Gon KIM , Jooyeon AHN , Ji-Yeong KIM , Nayoun WON , Shin Ae JUN
IPC: C09K11/88 , C09K11/02 , G02F1/13357 , C09K11/08 , H10K50/115 , H10K59/12 , H10K59/38
CPC classification number: C09K11/883 , C09K11/02 , G02F1/133617 , C09K11/0883 , H10K50/115 , H10K59/12 , H10K59/38 , B82Y20/00
Abstract: Disclosed are a quantum dot and a quantum dot-polymer composite and a device including the same, wherein the quantum dot includes a semiconductor nanocrystal core including indium (In) and phosphorous (P), a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc and sulfur, wherein the quantum dot does not include cadmium, wherein in the quantum dot, a mole ratio of sulfur with respect to selenium is less than or equal to about 2.5:1.
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公开(公告)号：US20230217775A1
公开(公告)日：2023-07-06
申请号：US18091879
申请日：2022-12-30
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yongwook KIM , Ji-Yeong KIM , Soo Kyung KWON , Eun Joo JANG , Sungwoo HWANG
IPC: H10K59/38
Abstract: A display panel includes a light emitting panel and a color conversion panel. The color conversion layer emits a predetermined light. A color of the predetermined light comprises a first region of Cx of about 0.26 to about 0.35 and Cy of about 0.27 to about 0.35 in CIE 1931 color coordinates, and in an emission spectrum of the predetermined light having a color in the first region, a first area percentage is less than or equal to about 65%, where the first area percentage is defined by the following formula: [A/B]×100%, in which A denotes an area of a region having a wavelength of less than or equal to about 470 nm in the emission spectrum, and B denotes an area of a region having a wavelength of less than or equal to about 480 nm in the emission spectrum.
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公开(公告)号：US20220119706A1
公开(公告)日：2022-04-21
申请号：US17502645
申请日：2021-10-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Soo Kyung KWON , Yong Wook KIM , Ji-Yeong KIM , Seon-Yeong KIM , Sungwoo HWANG
IPC: C09K11/88 , C09K11/02 , H01L51/50 , G02F1/13357
Abstract: A quantum dot composite that includes a matrix; and a plurality of quantum dots and titanium oxide particles dispersed in the matrix, wherein the quantum dots include zinc, tellurium, and selenium, the quantum dots do not comprise cadmium, lead, mercury, or a combination thereof, and in the quantum dot composite, a weight ratio of tellurium with respect to titanium is greater than or equal to about 1.5:1 and less than or equal to about 10:1.
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公开(公告)号：US20220119705A1
公开(公告)日：2022-04-21
申请号：US17502542
申请日：2021-10-15
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Sungwoo HWANG , Soo Kyung KWON , Yong Wook KIM , Seon-Yeong KIM , Ji-Yeong KIM
IPC: C09K11/88 , C09K11/02 , H01L51/50 , G02F1/13357
Abstract: Provided is a quantum dot having a core-shell structure, wherein a core includes a first semiconductor nanocrystal including zinc, tellurium, and selenium, and a semiconductor nanocrystal shell is disposed on the core and includes a Group II-VI compound, wherein the quantum dot further includes phosphorus and fluorine, and the quantum dot does not include cadmium.
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Patent Agency Ranking
6.发明公开公开(公告)号：US20230250336A1
公开(公告)日：2023-08-10
申请号：US18297033
申请日：2023-04-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Yong Wook KIM , Eun Joo JANG , Hyo Sook JANG , Soo Kyung KWON , Seon-Yeong KIM , Ji-Yeong KIM
CPC classification number: C09K11/883 , C09K11/025 , G02B6/005 , G02F1/133617 , C09K11/88 , C09K11/0805 , C09K11/562 , H10K59/12 , H10K59/38 , B82Y20/00
Abstract: A cadmium free quantum dot includes zinc, tellurium, and selenium, and lithium. A full width at half maximum of a maximum luminescent peak of the cadmium free quantum dot is less than or equal to about 50 nanometers and the cadmium free quantum dot has a quantum efficiency of greater than 1%.
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公开(公告)号：US20220406974A1
公开(公告)日：2022-12-22
申请号：US17846143
申请日：2022-06-22
Applicant: Samsung Electronics Co., Ltd.
Inventor： Seon-Yeong KIM , Yong Wook KIM , Soo Kyung KWON , Ji-Yeong KIM , Sungwoo HWANG
Abstract: Nanostructures including a first semiconductor nanocrystal including zinc and selenium, and a second semiconductor nanocrystal including a zinc chalcogenide, wherein a composition of the second semiconductor nanocrystal is different from a composition of the first semiconductor nanocrystal, wherein the nanostructures further include tellurium, wherein in the nanostructures, a mole ratio of selenium to tellurium is greater than or equal to about 0.83:1 and less than or equal to about 10:1, wherein a derivative thermogravimetry curve of the nanostructures has an extreme value in a temperature range of greater than or equal to about 250° C. and less than or equal to about 420° C.
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公开(公告)号：US20220119708A1
公开(公告)日：2022-04-21
申请号：US17503436
申请日：2021-10-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Seon-Yeong KIM , Yong Wook KIM , Soo Kyung KWON , Ji-Yeong KIM , Sungwoo HWANG
Abstract: A cadmium free quantum dot or a population thereof or a device including the same, wherein the cadmium free quantum dot includes a core (or a semiconductor nanocrystal particle) including a first semiconductor including a Group IIB-VI compound and a shell (or a coating) disposed on the core (or the semiconductor nanocrystal particle) including a Group IIB-V compound and exhibits a quantum efficiency of about 60% or higher.
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9.发明申请公开(公告)号：US20210115332A1
公开(公告)日：2021-04-22
申请号：US17072335
申请日：2020-10-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Seon-Yeong KIM , Soo Kyung KWON , Yong Wook KIM , Ji-Yeong KIM , Jihyun MIN , Sungwoo HWANG , Eun Joo JANG
Abstract: A core-shell quantum dot including a core including a first semiconductor nanocrystal, the first semiconductor nanocrystal including zinc, tellurium, and selenium and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc and selenium, sulfur, or a combination thereof and a production thereof are disclosed, wherein the core-shell quantum dot does not include cadmium, lead, mercury, or a combination thereof, wherein the core-shell quantum dot(s) includes chlorine, wherein in the core-shell quantum dot, a mole ratio of chlorine with respect to tellurium is greater than or equal to about 0.01:1 and wherein a quantum efficiency of the core-shell quantum dot is greater than or equal to about 10%.
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公开(公告)号：US20200332186A1
公开(公告)日：2020-10-22
申请号：US16851509
申请日：2020-04-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Ji-Yeong KIM , Soo Kyung KWON , Seon-Yeong KIM , Yong Wook KIM , Eun Joo JANG
Abstract: A core-shell quantum dot comprising zinc, a core comprising a first semiconductor nanocrystal material; and a semiconductor nanocrystal shell disposed on the core, wherein the core-shell quantum dot does not comprise cadmium, and does comprise zinc, tellurium, selenium, and aluminum.
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