公开(公告)号：US11177264B2

公开(公告)日：2021-11-16

申请号：US16566510

申请日：2019-09-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-hyeon Jeon ,  Se-keun Park ,  Dong-sik Park ,  Seok-ho Shin

IPC: H01L27/108 ,  H01L29/06 ,  H01L29/423 ,  H01L21/306 ,  H01L21/28

Abstract: Semiconductor devices are provided. A semiconductor device includes a substrate including a plurality of active regions that extend longitudinally in a direction and an isolation region that electrically isolates the plurality of active regions from each other. The semiconductor device includes a gate trench that extends across the plurality of active regions and the isolation region. The semiconductor device includes a gate structure that extends in the gate trench. The semiconductor device includes a gate dielectric layer that is between the gate trench and the gate structure, in each of the plurality of active regions. The gate structure has a first width in the direction in each of the plurality of active regions and has a second width in the direction in the isolation region that is different from the first width.

公开(公告)号：US20200168611A1

公开(公告)日：2020-05-28

申请号：US16566510

申请日：2019-09-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-hyeon Jeon ,  Se-keun Park ,  Dong-sik Park ,  Seok-ho Shin

IPC: H01L27/108 ,  H01L29/06 ,  H01L29/423 ,  H01L21/28 ,  H01L21/306

Abstract: Semiconductor devices are provided. A semiconductor device includes a substrate including a plurality of active regions that extend longitudinally in a direction and an isolation region that electrically isolates the plurality of active regions from each other. The semiconductor device includes a gate trench that extends across the plurality of active regions and the isolation region. The semiconductor device includes a gate structure that extends in the gate trench. The semiconductor device includes a gate dielectric layer that is between the gate trench and the gate structure, in each of the plurality of active regions. The gate structure has a first width in the direction in each of the plurality of active regions and has a second width in the direction in the isolation region that is different from the first width.