公开(公告)号：US20140239291A1

公开(公告)日：2014-08-28

申请号：US14062137

申请日：2013-10-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyoung-seok SON ,  Myung-kwan RYU ,  Jae-Kyeong JEONG

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/66

CPC classification number: H01L29/66969 ,  H01L29/78606 ,  H01L29/7869

Abstract: According to example embodiments a TFT includes: a substrate; a gate electrode on the substrate; a gate insulating layer on the gate electrode; a channel layer on the gate insulating layer, the channel layer including an indium-rich metal-oxide layer; a first electrode on one end of the channel layer; a second electrode on the other end of the channel layer; and a passivation layer on the channel layer between the first and second electrodes.

Abstract translation: 根据示例性实施例，TFT包括：衬底; 基板上的栅电极; 栅电极上的栅极绝缘层; 栅极绝缘层上的沟道层，沟道层包括富铟金属氧化物层; 沟道层一端的第一电极; 沟道层另一端的第二电极; 以及在第一和第二电极之间的沟道层上的钝化层。