公开(公告)号：US20230095717A1

公开(公告)日：2023-03-30

申请号：US17862987

申请日：2022-07-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： JUNGMIN JU ,  CHAN-SIC YOON ,  GYUHYUN KIL ,  Doosan BACK ,  JUNG-HOON HAN

IPC: H01L27/108 ,  H01L23/528 ,  H01L23/532

Abstract: Disclosed is a semiconductor device comprising a peripheral word line disposed on a substrate, a lower dielectric pattern covering the peripheral word line and including a first part that covers a lateral surface of the peripheral word line and a second part that covers a top surface of the peripheral word line, a contact plug on one side of the peripheral word line and penetrating the first and second parts, and a filling pattern in contact with the second part of the lower dielectric pattern and penetrating at least a portion of the second part. The contact plug includes a contact pad disposed on a top surface of the lower dielectric pattern, and a through plug penetrating the first and second parts. The filling pattern surrounds a lateral surface of the contact pad. The first and second parts include the same material.