公开(公告)号：US20230115434A1

公开(公告)日：2023-04-13

申请号：US17868944

申请日：2022-07-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minjun LEE ,  YONGSEOK KIM ,  HYUNCHEOL KIM ,  JONGMAN PARK ,  DONGSOO WOO ,  KYUNGHWAN LEE

IPC: H01L27/11507

Abstract: Disclosed is a semiconductor memory device including a substrate, a plurality of source lines extending in a first direction on the substrate, a plurality of word lines crossing the source lines and extending in a second direction different from the first direction, a plurality of bit lines crossing the source lines and the word lines and extending in a third direction different from the first direction and the second direction, and a plurality of memory cells disposed at intersections between the source lines, the word lines, and the bit lines. The first, second, and third directions are parallel to a top surface of the substrate.