公开(公告)号：US20230266258A1

公开(公告)日：2023-08-24

申请号：US18113121

申请日：2023-02-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： INHYE PARK ,  SUYOUNG LEE ,  YUJIN CHO ,  JONG CHEON SUN ,  CHUNGSAM JUN

IPC: G01N23/2251

CPC classification number: G01N23/2251 ,  G01N2223/6116 ,  G01N2223/646

Abstract: A method of inspecting a semiconductor device includes charging an inspection region of a semiconductor device using a charging electron beam, and scanning the inspection region using a scanning electron beam. The charging of the inspection region includes dividing the inspection region into a charging region and a non-charging region, and charging the charging region using the charging electron beam. The scanning of the inspection region includes irradiating the scanning electron beam to the inspection region, and detecting secondary electrons emitted from the inspection region by the scanning electron beam.