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公开(公告)号:US20230305055A1
公开(公告)日:2023-09-28
申请号:US18164256
申请日:2023-02-03
Applicant: Samsung Electronics Co., Ltd.
Inventor: Bumsuk Chung , Hyungseok Kang , Kyewan Park , Sungbo Shim , Sanghyun Ahn , Inkap Chang , Minho Jeong
IPC: G01R31/28
CPC classification number: G01R31/2896
Abstract: A method of testing a semiconductor device includes obtaining first data generated by testing wafers, each including a plurality of chips, the obtaining based on a plurality of first items, obtaining second data generated by testing packages, each including a packaged chip, the obtaining based on a plurality of second items, detecting correlations between the plurality of first items and the plurality of second items, based on the first data and the second data, identifying at least one first item affecting variation of the packages, based on the correlations, and testing the identified at least one first item.
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公开(公告)号:US20180041139A1
公开(公告)日:2018-02-08
申请号:US15584125
申请日:2017-05-02
Inventor: Hyeonjin SHIN , Jeongho Cho , Hyungseok Kang , Han Kim , Sangwoo Kim , Seongsu Kim , Siuk Cheon
IPC: H02N1/04
Abstract: Example embodiments relate to an electrode structure, a triboelectric generator including the electrode structure, and a method of manufacturing the electrode structure. The electrode structure includes a flexible layer configured to be bendable by an external force and an electrode, at least some regions thereof being embedded in the flexible layer.
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公开(公告)号:US10770989B2
公开(公告)日:2020-09-08
申请号:US15584125
申请日:2017-05-02
Inventor: Hyeonjin Shin , Jeongho Cho , Hyungseok Kang , Han Kim , Sangwoo Kim , Seongsu Kim , Siuk Cheon
IPC: H02N1/04
Abstract: Example embodiments relate to an electrode structure, a triboelectric generator including the electrode structure, and a method of manufacturing the electrode structure. The electrode structure includes a flexible layer configured to be bendable by an external force and an electrode, at least some regions thereof being embedded in the flexible layer.
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