公开(公告)号：US20240247188A1

公开(公告)日：2024-07-25

申请号：US18415796

申请日：2024-01-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong Seok HAN ,  Ji Hyun MIN ,  Yuho WON ,  Jin A KIM ,  Hogeun CHANG ,  Hyundong HA

IPC: C09K11/88 ,  B82Y20/00 ,  B82Y40/00 ,  H10K50/115

CPC classification number: C09K11/883 ,  H10K50/115 ,  B82Y20/00 ,  B82Y40/00

Abstract: A semiconductor nanoparticle, a production method, and an electroluminescent devices including the same, wherein the semiconductor nanoparticles include a zinc chalcogenide including zinc, selenium, and sulfur, the semiconductor nanoparticles do not include cadmium, the semiconductor nanoparticles exhibit a peak emission wavelength in a range of greater than or equal to about 455 nanometers (nm) and less than or equal to about 480 nm, in a photoluminescence spectroscopy analysis, the semiconductor nanoparticles exhibit an absolute quantum yield of greater than or equal to about 80% and a full width at half maximum of less than or equal to about 50 nm, and an average particle size of the semiconductor nanoparticles is greater than or equal to about 12 nm and less than or equal to about 50 nm.

公开(公告)号：US20250040296A1

公开(公告)日：2025-01-30

申请号：US18783623

申请日：2024-07-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ji Hyun MIN ,  DAEUN YOON ,  Won Sik YOON ,  Jae Yong LEE ,  Hogeun CHANG ,  Hyundong HA ,  Yong Seok HAN

IPC: H01L33/06 ,  H01L25/075 ,  H01L33/00 ,  H01L33/28 ,  H01L33/30

Abstract: A semiconductor nanoparticle, a method of preparing the semiconductor nanoparticle, and an electroluminescent device including the semiconductor nanoparticle. The method of preparing the semiconductor nanoparticle includes contacting a zinc precursor and a sulfur precursor in the presence of a first particle at a predetermined temperature to form a semiconductor nanocrystal layer containing zinc sulfide on the first particle, wherein the first particle includes a Group II-VI compound including zinc, selenium, and, optionally, tellurium, or the first particle includes a Group III-V compound including indium and phosphorus. The predetermined temperature includes (e.g., is) a temperature (e.g., a reaction temperature) of greater than 300° C. and less than or equal to about 380° C., and the sulfur precursor includes a thiol compound of C3 (e.g. C9) to C50 or a combination thereof.

公开(公告)号：US20240174918A1

公开(公告)日：2024-05-30

申请号：US18517112

申请日：2023-11-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyundong HA ,  Yuho WON ,  Taehyung KIM ,  Nayoun WON ,  Hogeun CHANG

IPC: C09K11/62 ,  C09D11/037 ,  C09D11/50 ,  C09K11/02 ,  H01L33/00 ,  H01L33/06

CPC classification number: C09K11/621 ,  C09D11/037 ,  C09D11/50 ,  C09K11/02 ,  H01L33/0025 ,  H01L33/06 ,  B82Y20/00

Abstract: A semiconductor nanoparticle, a method of manufacturing the semiconductor nanoparticle, a composite including the semiconductor nanoparticle, a color conversion panel, and a display panel. The semiconductor nanoparticle includes silver, indium, gallium, and sulfur, and is configured to emit blue light, and exhibits a quantum yield of greater than or equal to about 40% and a full width at half maximum of less than 70 nm.