Abstract:
A semiconductor device includes a base substrate comprising a first region and a second region, a photonics device disposed in the first region, the photonics device comprising a first doped layer disposed on the base substrate, and a second doped layer disposed on the first doped layer so that at least a portion vertically overlaps the first doped layer, the second doped layer having a first vertical thickness, and a transistor disposed in the second region, the transistor comprising a semiconductor layer disposed on the base substrate and horizontally spaced apart from the first doped layer, and a gate electrode horizontally spaced apart from the second doped layer and disposed on the semiconductor layer, disposed at the same vertical level as that of the second doped layer, and having a second vertical thickness equal to the first vertical thickness.
Abstract:
An optical communication apparatus and printed circuit board (PCB), which include an optical interface for realizing concurrent read and write operations, and a data processing system including a memory module and the PCB are provided. The optical communication apparatus includes an optical interface unit configured to output optical signal of first data and receive optical signal of second data simultaneously, and an optical bus configured to transmit the optical signals between the first optical interface unit and a second optical interface unit, the second optical interface unit being configured to receive the optical signal of the first data and output the optical signal of the second data simultaneously. The optical signal of the first data and the optical signal of the second data have polarizations, respectively, orthogonal to each other.