公开(公告)号：US20190131332A1

公开(公告)日：2019-05-02

申请号：US16108613

申请日：2018-08-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-kyu Lee ,  Hyuk-Soon Choi ,  Seung-sik Kim

IPC: H01L27/146 ,  H04N5/369

Abstract: Image sensors are provided including a structure capable of settling an output voltage within a very short time for implementing a high-speed image sensor. The image sensor includes a pixel area, in which a photo-diode (PD) and a transfer transistor (Tr) configured to transmit charges accumulated in the PD to a floating diffusion (FD) area are disposed; and a Tr area, which is disposed adjacent to the pixel area and includes a first Tr, a second Tr, and a third Tr, wherein a first gate oxide film disposed below a first gate electrode of the first Tr and a second gate oxide film disposed below a second gate electrode of the second Tr include channel oxide films thinner than a gate oxide film of the transfer Tr.

公开(公告)号：US10957726B2

公开(公告)日：2021-03-23

申请号：US16108613

申请日：2018-08-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-Kyu Lee ,  Hyuk-Soon Choi ,  Seung-Sik Kim

IPC: H01L27/146 ,  H04N5/369 ,  H04N5/3745

Abstract: Image sensors are provided including a structure capable of settling an output voltage within a very short time for implementing a high-speed image sensor. The image sensor includes a pixel area, in which a photo-diode (PD) and a transfer transistor (Tr) configured to transmit charges accumulated in the PD to a floating diffusion (FD) area are disposed; and a Tr area, which is disposed adjacent to the pixel area and includes a first Tr, a second Tr, and a third Tr, wherein a first gate oxide film disposed below a first gate electrode of the first Tr and a second gate oxide film disposed below a second gate electrode of the second Tr include channel oxide films thinner than a gate oxide film of the transfer Tr.