公开(公告)号：US20240357803A1

公开(公告)日：2024-10-24

申请号：US18541559

申请日：2023-12-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongmin CHOI ,  Hyo-sub KIM ,  Sangkyu SUN ,  Junhyeok AHN ,  Jay-bok CHOI

IPC: H10B12/00

CPC classification number: H10B12/50 ,  H10B12/0335 ,  H10B12/482

Abstract: A semiconductor device may include a substrate including a cell block region and a peripheral region, which are adjacent to each other in a first direction, an active pattern on the cell block region, a bit line provided on the active pattern and extended in the first direction, a first insulating structure in contact with the bit line, and a contact plug electrically connected to the bit line. The bit line may include a first curved portion, a first linear portion connected to the first curved portion, and a first intervening portion connected to the first curved portion. The contact plug may be overlapped with the first curved portion.