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公开(公告)号:US10387014B2
公开(公告)日:2019-08-20
申请号:US14770013
申请日:2014-02-20
Applicant: Samsung Electronics Co., Ltd. , Industry-Academic Cooperation Foundation, Yonsei University
Inventor: So-Young Kim , Yong-Gu Ji , Sung-Joo Ahn , Hwan Hwangbo , Hyo-Chang Kim , Jung-Hoon Park , Hyung-Jun Oh , Hyun-Guk Yoo , Gyeong-Ho Chu
IPC: G06F3/0482 , G06F3/0485 , G06F3/0484 , H04M1/725 , G06F3/0488 , G06F3/041 , G06F3/0481 , G06F3/0486
Abstract: A method and a mobile terminal for controlling the icons of the mobile terminal are provided. The method includes displaying at least one icon on a widget screen corresponding with a function for changing the size of the icon displayed on a touch screen; receiving a selection of an icon to which the function is to be applied; activating an attribute of the selected icon; and adjusting, if a side of the selected icon is dragged on the widget screen, a size of the selected icon according to a direction of the drag.
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公开(公告)号:US20130176803A1
公开(公告)日:2013-07-11
申请号:US13661773
申请日:2012-10-26
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jong-Ho Lee , Kyu-Chang Kang , Hyo-Chang Kim , Jae-Youn Youn , Sang-Jae Rhee
IPC: G11C11/402 , G11C7/12 , G11C7/06
CPC classification number: G11C7/08 , G11C11/40626 , G11C11/4091 , G11C2211/4065 , G11C2211/4068
Abstract: A semiconductor memory device and a self-refresh method of the semiconductor memory device. The semiconductor memory device includes: a memory cell array including one or more memory cells; a sense amplifier connected to a sensing line and a complementary sensing line and sensing/amplifying data stored in the one or more memory cells; and a sense amplifier control circuit sequentially supplying a first voltage and a second voltage having different levels to the sense amplifier through the sensing line during a refresh operation.
Abstract translation: 半导体存储器件和半导体存储器件的自刷新方法。 半导体存储器件包括:包括一个或多个存储单元的存储单元阵列; 连接到感测线和互补感测线的感测放大器,以及感测/放大存储在所述一个或多个存储器单元中的数据; 以及读出放大器控制电路,其在刷新操作期间通过感测线路顺序地将具有不同电平的第一电压和第二电压提供给读出放大器。
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