公开(公告)号：US20220255435A1

公开(公告)日：2022-08-11

申请号：US17665933

申请日：2022-02-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyeseok Yoon ,  Hyebong Ko ,  Jinwoo So ,  Hyoungseok Oh ,  Daewoong Cho ,  Jungwook Heo

IPC: H02M3/158 ,  H02M1/00 ,  H02J7/00

Abstract: The inventive concepts provide a bidirectional switching converter including a first power metal oxide semiconductor field effect transistor (MOSFET) connecting an input voltage node to a switching node, a second power MOSFET connecting the switching node to a ground node, and a zero current detection (ZCD) auto-calibration circuit configured to perform one of an operation of generating a first offset for varying a turn-on time of the first power MOSFET according to an operation mode and an operation of generating a second offset for varying a turn-on time of the second power MOSFET according to the operation mode.