公开(公告)号：US20230187463A1

公开(公告)日：2023-06-15

申请号：US18060180

申请日：2022-11-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hye Yun Park ,  Yeon Sook Kim ,  In Ji Lee ,  Tae Young Song

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/14689

Abstract: An image sensor substrate includes a semiconductor substrate layer and a semiconductor epitaxial layer on the substrate layer. The semiconductor substrate layer has a boron (B) doping concentration therein in a range from 3×1018 cm−3 to 1×1019 cm−3, whereas the semiconductor epitaxial layer has a boron (B) doping concentration therein in a range from 1×1016 cm−3 to 6×1016 cm−3.