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公开(公告)号：US20210389662A1
公开(公告)日：2021-12-16
申请号：US17328008
申请日：2021-05-24
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hwanseok SEO , Seongsue KIM , Changyoung JEONG
Abstract: A phase shift mask for extreme ultraviolet lithography includes a substrate, a reflective layer on the substrate, a capping layer on the reflective layer, a buffer pattern on the capping layer, the buffer pattern including an opening exposing a surface of the capping layer, and an absorber pattern on the buffer pattern, the absorber pattern including a refractive index less than a refractive index of the buffer pattern and a thickness greater than a thickness of the buffer pattern. The buffer pattern includes a material having an etch selectivity with respect to the absorber pattern and the capping layer.
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公开(公告)号：US20180143527A1
公开(公告)日：2018-05-24
申请号：US15625049
申请日：2017-06-16
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hwanseok SEO , SeongSue KIM , Taehoon LEE , Roman CHALYKH
Abstract: A phase-shift mask for extreme ultraviolet (EUV) lithography may be provided. The phase-shift mask may include a substrate, a reflection layer on the substrate, and phase-shift patterns including at least one metal nitride on the reflection layer. The at least one metal nitride may include at least one of TaN, TiN, ZrN, HfN, CrN, VN, NbN, MoN, WN, AlN, GaN, ScN, and YN.
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公开(公告)号：US20200209732A1
公开(公告)日：2020-07-02
申请号：US16814580
申请日：2020-03-10
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hwanseok SEO , SeongSue Kim , Taehoon Lee , Roman Chalykh
Abstract: A phase-shift mask for extreme ultraviolet (EUV) lithography may be provided. The phase-shift mask may include a substrate, a reflection layer on the substrate, and phase-shift patterns including at least one metal nitride on the reflection layer. The at least one metal nitride may include at least one of TaN, TiN, ZrN, HfN, CrN, VN, NbN, MoN, WN, AlN, GaN, ScN, and YN.
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