公开(公告)号：US20240192154A1

公开(公告)日：2024-06-13

申请号：US18243835

申请日：2023-09-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwangeun Kim ,  Sewon Kim ,  Huisoo Kim ,  Jeongho Ahn ,  Sungeun Lee

IPC: G01N23/2251

CPC classification number: G01N23/2251 ,  G01N2223/42 ,  G01N2223/6116

Abstract: A pattern inspection apparatus includes a sample including a plurality of holes having thicknesses that are different from each other, an electron gun configured to generate an input electron beam and emit the input electron beam onto a wafer and the sample, a stage configured to support the wafer and the sample, a detector configured to generate a scanning electron microscope (SEM) image by detecting emitted electrons from the wafer and the sample, and a processor configured to process the SEM image into a three-dimensional profiling image containing depth information of the wafer and determine whether a condition of the input electron beam has changed based on the processing of the SEM image.