公开(公告)号：US20250132249A1

公开(公告)日：2025-04-24

申请号：US18761886

申请日：2024-07-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Muryeong KUK ,  Dosun LEE ,  Seongheum CHOI ,  Hongkeun PARK ,  Giwoong SHIM

IPC: H01L23/522 ,  H01L23/528 ,  H01L23/532

Abstract: An interconnection structure may include a first insulating interlayer on a substrate, a first metal pattern on the substrate and passing through the first insulating interlayer, a seed metal layer pattern surrounding a portion of a sidewall of the first metal pattern and a bottom of the first metal pattern, and a second metal pattern. The second metal pattern may directly contact an uppermost surface of the seed metal layer pattern, the upper sidewall of the first metal pattern, and the upper surface of the first metal pattern. An upper sidewall and an upper surface of the first metal pattern may be exposed by the seed metal layer pattern. The second metal pattern may fill at least a recess between the first insulating interlayer and the first metal pattern.