公开(公告)号：US20210384101A1

公开(公告)日：2021-12-09

申请号：US17408988

申请日：2021-08-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hee-Jeong KIM ,  Juhyun LYU ,  Un-Byoung KANG ,  Jongho LEE

IPC: H01L23/373 ,  H01L23/31 ,  H01L23/367

Abstract: Disclosed is a semiconductor package comprising first and second semiconductor structures spaced apart on a first substrate, a heat sink covering the first and second semiconductor structure and the first substrate, and a thermal interface material layer between the heat sink and the first and second semiconductor structures. The first semiconductor structure includes a first sidewall adjacent to the second semiconductor structure and a second sidewall opposite the first sidewall. The thermal interface material layer includes a first segment between the first and second semiconductor structures and a second segment protruding beyond the second sidewall. A first distance from a top surface of the first substrate to a lowest point of a bottom surface of the first segment is less than a second distance from the top surface of the first substrate to a lowest point of a bottom surface of the second segment.