公开(公告)号：US20140110824A1

公开(公告)日：2014-04-24

申请号：US14052097

申请日：2013-10-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongkyun Park ,  Han-Young Kim ,  Joon Kim ,  Hyun Park ,  Junghwan Oh ,  Minhee Cho

IPC: H01L49/02

CPC classification number: H01L28/91 ,  H01L21/28562 ,  H01L21/31116 ,  H01L27/10852

Abstract: A semiconductor device includes a plurality of capacitors disposed on a substrate and a support pattern supporting upper portions and lower portions of the capacitors. Each of the capacitors includes a lower electrode, an upper electrode, and a dielectric layer between the lower and upper electrodes. The lower electrode includes a first electrode portion electrically connected to the substrate and having a solid shape and a second electrode portion stacked on the first electrode portion and having a shape comprising an opening therein. The support pattern includes an upper pattern contacting sidewalls of top end portions of the lower electrodes and a lower pattern vertically spaced apart from the upper pattern. The lower pattern contacts sidewalls under the top end portions of the lower electrodes.

Abstract translation: 半导体器件包括设置在基板上的多个电容器和支撑电容器的上部和下部的支撑图案。 每个电容器包括在下电极和上电极之间的下电极，上电极和电介质层。 下电极包括电连接到基板并具有固体形状的第一电极部分和堆叠在第一电极部分上并具有包括其中的开口的形状的第二电极部分。 支撑图案包括接触下部电极的顶端部的侧壁的上部图案和与上部图案垂直间隔开的下部图案。 下部图案接触下部电极的顶端部分的侧壁。

公开(公告)号：US09053971B2

公开(公告)日：2015-06-09

申请号：US14052097

申请日：2013-10-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongkyun Park ,  Han-Young Kim ,  Joon Kim ,  Hyun Park ,  Junghwan Oh ,  Minhee Cho

IPC: H01L21/02 ,  H01L29/94 ,  H01L27/108 ,  H01L21/20 ,  H01L49/02

CPC classification number: H01L28/91 ,  H01L21/28562 ,  H01L21/31116 ,  H01L27/10852

Abstract: A semiconductor device includes a plurality of capacitors disposed on a substrate and a support pattern supporting upper portions and lower portions of the capacitors. Each of the capacitors includes a lower electrode, an upper electrode, and a dielectric layer between the lower and upper electrodes. The lower electrode includes a first electrode portion electrically connected to the substrate and having a solid shape and a second electrode portion stacked on the first electrode portion and having a shape comprising an opening therein. The support pattern includes an upper pattern contacting sidewalls of top end portions of the lower electrodes and a lower pattern vertically spaced apart from the upper pattern. The lower pattern contacts sidewalls under the top end portions of the lower electrodes.

Abstract translation: 半导体器件包括设置在基板上的多个电容器和支撑电容器的上部和下部的支撑图案。 每个电容器包括在下电极和上电极之间的下电极，上电极和电介质层。 下电极包括电连接到基板并具有固体形状的第一电极部分和堆叠在第一电极部分上并具有包括其中的开口的形状的第二电极部分。 支撑图案包括接触下部电极的顶端部的侧壁的上部图案和与上部图案垂直间隔开的下部图案。 下部图案接触下部电极的顶端部分的侧壁。

公开(公告)号：US09331140B2

公开(公告)日：2016-05-03

申请号：US14703933

申请日：2015-05-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongkyun Park ,  Han-Young Kim ,  Joon Kim ,  Hyun Park ,  Junghwan Oh ,  Minhee Cho

IPC: H01L21/02 ,  H01L27/108 ,  H01L21/20 ,  H01L49/02 ,  H01L21/285 ,  H01L21/311

CPC classification number: H01L28/91 ,  H01L21/28562 ,  H01L21/31116 ,  H01L27/10852

Abstract: A semiconductor device includes a plurality of capacitors disposed on a substrate and a support pattern supporting upper portions and lower portions of the capacitors. Each of the capacitors includes a lower electrode, an upper electrode, and a dielectric layer between the lower and upper electrodes. The lower electrode includes a first electrode portion electrically connected to the substrate and having a solid shape and a second electrode portion stacked on the first electrode portion and having a shape comprising an opening therein. The support pattern includes an upper pattern contacting sidewalls of top end portions of the lower electrodes and a lower pattern vertically spaced apart from the upper pattern. The lower pattern contacts sidewalls under the top end portions of the lower electrodes.

公开(公告)号：US20150236084A1

公开(公告)日：2015-08-20

申请号：US14703933

申请日：2015-05-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongkyun Park ,  Han-Young Kim ,  Joon Kim ,  Hyun Park ,  Junghwan Oh ,  Minhee Cho

IPC: H01L49/02 ,  H01L21/311 ,  H01L21/285

CPC classification number: H01L28/91 ,  H01L21/28562 ,  H01L21/31116 ,  H01L27/10852

Abstract: A semiconductor device includes a plurality of capacitors disposed on a substrate and a support pattern supporting upper portions and lower portions of the capacitors. Each of the capacitors includes a lower electrode, an upper electrode, and a dielectric layer between the lower and upper electrodes. The lower electrode includes a first electrode portion electrically connected to the substrate and having a solid shape and a second electrode portion stacked on the first electrode portion and having a shape comprising an opening therein. The support pattern includes an upper pattern contacting sidewalls of top end portions of the lower electrodes and a lower pattern vertically spaced apart from the upper pattern. The lower pattern contacts sidewalls under the top end portions of the lower electrodes.

Abstract translation: 半导体器件包括设置在基板上的多个电容器和支撑电容器的上部和下部的支撑图案。 每个电容器包括在下电极和上电极之间的下电极，上电极和电介质层。 下电极包括电连接到基板并具有固体形状的第一电极部分和堆叠在第一电极部分上并具有包括其中的开口的形状的第二电极部分。 支撑图案包括接触下部电极的顶端部的侧壁的上部图案和与上部图案垂直间隔开的下部图案。 下部图案接触下部电极的顶端部分的侧壁。