公开(公告)号：US20220173016A1

公开(公告)日：2022-06-02

申请号：US17651456

申请日：2022-02-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwang Wuk PARK ,  Sung Dong CHO ,  Eun Ji KIM ,  Hak Seung LEE ,  Dae Suk LEE ,  Dong Chan LIM ,  Sang Jun PARK

IPC: H01L23/48 ,  H01L21/48

Abstract: A semiconductor device includes a substrate, an interlayer insulating layer on the substrate, a first etch stop layer on the substrate, a first through-silicon-via (TSV) configured to pass vertically through the substrate and the interlayer insulating layer, and a second TSV configured to pass vertically through the substrate, the interlayer insulating layer, and the first etch stop layer, wherein the second TSV has a width greater than that of the first TSV.