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公开(公告)号:US20220238571A1
公开(公告)日:2022-07-28
申请号:US17522142
申请日:2021-11-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sang-Su PARK , Kwansik Kim , Changhwa Kim , Taemin Kim , Gyuhyun Lim
IPC: H01L27/146
Abstract: An image sensor includes a substrate including a first surface and a second surface which is opposite to the first portion, and a pixel isolation portion provided in the substrate and configured to isolate unit pixels from each other. The pixel isolation portion includes a first filling insulation pattern extending from the first surface toward the second surface and having an air gap region, the first filling insulation pattern including a first sidewall and a second sidewall which is opposite to the first sidewall, a conductive structure including a first portion on the first sidewall, a second portion on the second sidewall, and a connection portion connecting the first portion and the second portion, and an insulating liner provided between the first portion and the substrate and between the second portion and the substrate.
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公开(公告)号:US12191335B2
公开(公告)日:2025-01-07
申请号:US17522142
申请日:2021-11-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sang-Su Park , Kwansik Kim , Changhwa Kim , Taemin Kim , Gyuhyun Lim
IPC: H01L27/146
Abstract: An image sensor includes a substrate including a first surface and a second surface which is opposite to the first portion, and a pixel isolation portion provided in the substrate and configured to isolate unit pixels from each other. The pixel isolation portion includes a first filling insulation pattern extending from the first surface toward the second surface and having an air gap region, the first filling insulation pattern including a first sidewall and a second sidewall which is opposite to the first sidewall, a conductive structure including a first portion on the first sidewall, a second portion on the second sidewall, and a connection portion connecting the first portion and the second portion, and an insulating liner provided between the first portion and the substrate and between the second portion and the substrate.
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公开(公告)号:US20220375982A1
公开(公告)日:2022-11-24
申请号:US17564308
申请日:2021-12-29
Applicant: Samsung Electronics Co., Ltd.
Inventor: Min-Jun Choi , Wonoh Ryu , Gyuhyun Lim , Myungjo Jung
IPC: H01L27/146
Abstract: Disclosed are image sensors and methods of fabricating the same. The image sensor comprises a substrate including a plurality of pixels, a photoelectric conversion region in the substrate at each of the pixels, a gate electrode on the substrate at each of the pixels, an interlayer dielectric layer on the substrate and the gate electrode, and a contact penetrating the interlayer dielectric layer and on the gate electrode. The contact includes a lower part on the gate electrode and an upper part on the lower part and connected to a wiring line on the interlayer dielectric layer. A planar shape of the lower part of the contact is larger than that of the upper part of the contact.
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