公开(公告)号：US20130119423A1

公开(公告)日：2013-05-16

申请号：US13677072

申请日：2012-11-14

Applicant: Samsung Electronics Co., Ltd

Inventor： Wan Ho LEE ,  Gi Bum KIM ,  Si Hyuk LEE

IPC: H01L33/58

CPC classification number: H01L33/58 ,  H01L33/44 ,  H01L2224/14 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014

Abstract: A semiconductor light emitting device and package containing the same include: a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. A light extraction layer is disposed on the light emitting structure and includes a light-transmissive thin film layer having light transmittance, a nano-rod layer including nano-rods disposed on the light-transmissive thin film layer, and a nano-wire layer including nano-wires disposed on the nano-rod layer.

Abstract translation: 包含其的半导体发光器件和封装包括：包括第一导电型半导体层，有源层和第二导电类型半导体层的发光结构。 光提取层设置在发光结构上，并且包括具有透光性的透光薄膜层，包括设置在透光薄膜层上的纳米棒的纳米棒层和纳米线层，纳米线层包括 纳米线布置在纳米棒层上。

公开(公告)号：US20180198025A1

公开(公告)日：2018-07-12

申请号：US15671275

申请日：2017-08-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae In SIM ,  Ju Heon YOON ,  Gi Bum KIM ,  Ji Hye LEE

IPC: H01L33/22 ,  H01L21/02 ,  H01L33/00 ,  H01L33/38

CPC classification number: H01L33/22 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02502 ,  H01L21/02521 ,  H01L33/007 ,  H01L33/38 ,  H01L33/42 ,  H01L2224/05001 ,  H01L2933/0016

Abstract: A semiconductor light emitting device includes a light emitting structure in which a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer are sequentially laminated, an insulating layer disposed on the light emitting structure and including first and second openings, an electrode layer disposed on the insulating layer and including first and second electrodes, and an adhesive layer disposed between the electrode layer and the insulating layer and including first and second openings. The first opening of the adhesive layer overlaps the first opening of the insulating layer and is equal to or larger than the first opening of the insulating layer. The second opening of the adhesive layer overlaps the second opening of the insulating layer and is equal to or larger than the second opening of the insulating layer.

公开(公告)号：US20130203195A1

公开(公告)日：2013-08-08

申请号：US13762983

申请日：2013-02-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Hyung KIM ,  Gi Bum KIM ,  Yu Seung KIM ,  Seung Woo CHOI ,  Gyeong Seon PARK ,  Shi Young LEE

IPC: H01L33/00

CPC classification number: H01L33/005 ,  H01L33/0079

Abstract: A method of manufacturing a semiconductor light emitting device, includes forming a light emitting structure on a growth substrate. The light emitting structure includes a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer. A support substrate having one or more protrusions formed on one surface thereof is prepared. The one or more protrusions formed on the one surface of the support substrate are attached to one surface of the light emitting structure. The growth substrate is separated from the light emitting structure.

Abstract translation: 一种制造半导体发光器件的方法，包括在生长衬底上形成发光结构。 发光结构包括第一导电半导体层，有源层和第二导电半导体层。 制备在其一个表面上形成有一个或多个突起的支撑基板。 形成在支撑基板的一个表面上的一个或多个突起附接到发光结构的一个表面。 生长衬底与发光结构分离。

公开(公告)号：US20180019380A1

公开(公告)日：2018-01-18

申请号：US15437970

申请日：2017-02-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ju Hyun KIM ,  Jae Ryung YOO ,  Gi Bum KIM ,  Ha Yeong SON ,  Sang Seok LEE

IPC: H01L33/38 ,  H01L33/44

CPC classification number: H01L33/382 ,  H01L33/44

Abstract: A semiconductor light emitting device includes: a multilayer semiconductor body having a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, an active layer between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, and at least one recess exposing the first conductivity-type semiconductor layer, and an insulating part on an internal sidewall of the at least one recess and an upper surface of the second conductivity-type semiconductor layer. The insulating part has an insulating spacer on the internal sidewall of the recess, and a lateral surface of the insulating spacer has a surface without an angular point from an upper end to a lower end thereof.

公开(公告)号：US20160072004A1

公开(公告)日：2016-03-10

申请号：US14714117

申请日：2015-05-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Yeob SONG ,  Ju Heon YOON ,  Gi Bum KIM ,  Hyun Young KIM ,  Jong Hoon HA

IPC: H01L33/00 ,  H01L33/40 ,  H01L33/04

CPC classification number: H01L33/40

Abstract: A semiconductor light emitting device includes: a light emitting structure including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed therebetween; a first electrode disposed on the light emitting structure to be electrically connected to the first conductivity-type semiconductor layer; and a second electrode disposed on the light emitting structure to be electrically connected to the second conductivity-type semiconductor layer. The second electrode includes a first layer disposed on the second conductivity-type semiconductor layer, and a second layer disposed on the first layer, having a sheet resistance higher than that of the first layer, and having a thickness less than that of the first layer.

Abstract translation: 一种半导体发光器件包括：发光结构，包括第一导电类型半导体层，第二导电型半导体层和设置在其间的有源层; 设置在所述发光结构上以与所述第一导电型半导体层电连接的第一电极; 以及设置在所述发光结构上以电连接到所述第二导电类型半导体层的第二电极。 第二电极包括设置在第二导电类型半导体层上的第一层和设置在第一层上的第二层，其具有比第一层高的薄层电阻，并且其厚度小于第一层的厚度 。

公开(公告)号：US20190334061A1

公开(公告)日：2019-10-31

申请号：US16234800

申请日：2018-12-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ju Heon YOON ,  Gi Bum KIM

IPC: H01L33/44 ,  H01L33/38 ,  H01L33/20 ,  H01L33/42 ,  H01L33/40

Abstract: A semiconductor light emitting device includes a light emitting structure having a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, a transparent electrode layer on the second conductivity-type semiconductor layer, and a reflective electrode structure on the transparent electrode layer that includes a light-transmitting insulating layer on the transparent electrode layer with insulating patterns, portions of sides of the insulating patterns being open, and a contact region of the transparent electrode layer being defined by a region between the insulating patterns, air gaps between the transparent electrode layer and the insulating patterns, the air gaps extending in the open portions of the sides of the insulating patterns, and a reflective electrode layer on the insulating patterns to cover the open portions of the insulating patterns, the reflective electrode layer being connected to the contact region of the transparent electrode layer.

公开(公告)号：US20140217355A1

公开(公告)日：2014-08-07

申请号：US13759585

申请日：2013-02-05

Applicant: RENSSELAER POLYTECHNIC INSTITUTE ,  SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gi Bum KIM ,  Ming MA ,  Ahmed NOEMAUN ,  E. Fred SCHUBERT ,  Jae-Hee CHO ,  Cheol Soo SONE ,  Sung Tae KIM ,  Chan Mook LIM

IPC: H01L33/22

CPC classification number: H01L33/44 ,  H01L2933/0083

Abstract: A semiconductor light emitting device includes: a semiconductor laminate having first and second conductivity type semiconductor layers and an active layer formed between the first and second conductivity type semiconductor layers; first and second electrodes connected to the first and second conductivity type semiconductor layers, respectively; and a micro-pattern formed on a light emitting surface from which light generated from the active layer is output, wherein a section of the micro-pattern parallel to the light emitting surface has a polygonal shape.

Abstract translation: 半导体发光器件包括：具有第一和第二导电类型半导体层的半导体层叠体和形成在第一和第二导电类型半导体层之间的有源层; 分别连接到第一和第二导电类型半导体层的第一和第二电极; 以及形成在发光面的微图案，从该有源层产生的光被输出，其中与发光面平行的微图案的一部分具有多边形形状。

公开(公告)号：US20130309865A1

公开(公告)日：2013-11-21

申请号：US13894170

申请日：2013-05-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Shi Young LEE ,  Tae Hyung KIM ,  Gi Bum KIM ,  Yu Seung KIM ,  Ju Hyun KIM ,  Jin Gi HONG

IPC: H01L21/768

CPC classification number: H01L21/76802 ,  H01L21/3083 ,  H01L21/76898 ,  H01L2933/0033

Abstract: There is provided a method of manufacturing a substrate for mounting an electronic device. The method includes disposing a protective layer on a surface of the substrate except for an edge portion thereof . An oxide film is disposed on the entirety of the surface of the substrate except for where the protective layer is disposed The oxide film is grown. A through hole is formed in a thickness direction of the substrate by selectively etching the protective layer. The oxide film is removed. In the manufacturing method, defects in the substrate for mounting an electronic device may be reduced and manufacturing costs can be reduced.

Abstract translation: 提供了一种制造用于安装电子设备的基板的方法。 该方法包括在除了其边缘部分之外的基板的表面上设置保护层。 除了设置保护层的地方之外，氧化膜设置在基板的整个表面上，生长氧化膜。 通过选择性地蚀刻保护层，在基板的厚度方向上形成通孔。 去除氧化膜。 在制造方法中，可以减少用于安装电子设备的基板中的缺陷，并且可以降低制造成本。

公开(公告)号：US20130113006A1

公开(公告)日：2013-05-09

申请号：US13670129

申请日：2012-11-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Hun KIM ,  Gi Bum KIM ,  Bum Joon KIM ,  Seung Wan CHAE ,  Su Hyun JO ,  Sang Yeob SONG

IPC: H01L33/60

CPC classification number: H01L33/10 ,  H01L33/22 ,  H01L33/382 ,  H01L33/405

Abstract: A semiconductor light emitting device include an n-type semiconductor layer, an active layer disposed on the n-type semiconductor layer, and a first p-type semiconductor layer disposed on the active layer. The first p-type semiconductor layer has an uneven structure formed on a surface thereof. A second p-type semiconductor layer has an impurity concentration higher than that of the first p-type semiconductor layer. The second p-type semiconductor layer is disposed on the first p-type semiconductor layer and has an uneven structure formed on a surface thereof. A reflective metal layer is formed on the second p-type semiconductor layer.

Abstract translation: 半导体发光器件包括n型半导体层，设置在n型半导体层上的有源层和设置在有源层上的第一p型半导体层。 第一p型半导体层在其表面上形成有不均匀结构。 第二p型半导体层的杂质浓度高于第一p型半导体层的杂质浓度。 第二p型半导体层设置在第一p型半导体层上，并且具有形成在其表面上的不均匀结构。 反射金属层形成在第二p型半导体层上。