公开(公告)号：US20230189528A1

公开(公告)日：2023-06-15

申请号：US17896546

申请日：2022-08-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Younggul SONG ,  Junyeong SEOK ,  Eunchu OH

IPC: H01L27/11573 ,  H01L27/11582 ,  H01L27/1157

CPC classification number: H01L27/11573 ,  H01L27/1157 ,  H01L27/11582

Abstract: A semiconductor device may include a plurality of gate electrode layers stacked in a first direction perpendicular to an upper surface of a substrate, a plurality of channel structures penetrating through the plurality of gate electrode layers and extending in the first direction, a plurality of first isolation structures extending in a second direction parallel to the upper surface of the substrate and dividing the plurality of gate electrode layers into a plurality of blocks, and a plurality of second isolation structures extending in the second direction within each of the plurality of blocks. Each of the plurality of first isolation structures may include only a first vertical insulating layer, and at least one of the plurality of second isolation structures may include a second vertical insulating layer and a conductive layer.

公开(公告)号：US20230207044A1

公开(公告)日：2023-06-29

申请号：US17816601

申请日：2022-08-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junyeong SEOK ,  Yonggul SONG ,  Eunchu OH

IPC: G11C29/50 ,  G11C11/56 ,  G11C16/10 ,  G11C16/26 ,  G11C29/42

CPC classification number: G11C29/50004 ,  G11C11/5628 ,  G11C11/5642 ,  G11C11/5671 ,  G11C16/10 ,  G11C16/26 ,  G11C29/42 ,  G11C2029/5004

Abstract: In a method of reprogramming data in a nonvolatile memory device including a plurality of pages each of which includes a plurality of memory cells, first page data programmed in a first page is read from among a plurality of page data programmed in the plurality of pages. The plurality of page data have a threshold voltage distribution including a plurality of states. An error correction code (ECC) decoding is performed on the first page data. A reprogram operation is selectively performed on target bits in which an error occurs among a plurality of bits included in the first page data based on a result of performing the ECC decoding on the first page data and a reprogram voltage. The target bits correspond to a first state among the plurality of states. A voltage level of the reprogram voltage is adaptively changed.