公开(公告)号：US10276505B2

公开(公告)日：2019-04-30

申请号：US15846498

申请日：2017-12-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-Bae Kim ,  Sang-Hoon Ahn ,  Eui-Bok Lee ,  Su-Hyun Bark ,  Hyeok-Sang Oh ,  Woo-Jin Lee ,  Hoon-Seok Seo ,  Sung-Jin Kang

IPC: H01L29/00 ,  H01L23/532 ,  H01L23/522 ,  H01L23/528

Abstract: An integrated circuit (IC) device includes a lower wiring structure including a lower metal film. The lower wiring structure penetrates at least a portion of a first insulating film disposed over a substrate. The IC device further includes a capping layer covering a top surface of the lower metal film, a second insulating film covering the capping layer, an upper wiring structure penetrating the second insulating film and the capping layer, and electrically connected to the lower metal film, and an air gap disposed between the lower metal film and the second insulating film. The air gap has a width defined by a distance between the capping layer and the upper wiring structure.

公开(公告)号：US10916437B2

公开(公告)日：2021-02-09

申请号：US16233399

申请日：2018-12-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Shin Jang ,  Jong-Min Baek ,  Hoon-Seok Seo ,  Eui-Bok Lee ,  Sung-Jin Kang ,  Vietha Nguyen ,  Deok-Young Jung ,  Sang-Hoon Ahn ,  Hyeok-Sang Oh ,  Woo-Kyung You

IPC: H01L21/308 ,  H01L21/033 ,  H01L21/02 ,  G03F7/004 ,  G03F7/20 ,  G03F7/11 ,  G03F7/075 ,  G03F7/09 ,  H01J37/32

Abstract: Provided herein is a method of forming micropatterns, including: forming an etching target film on a substrate; forming a photosensitivity assisting layer on the etching target film, the photosensitivity assisting layer being terminated with a hydrophilic group; forming an adhesive layer on the photosensitivity assisting layer, the adhesive layer forming a covalent bond with the hydrophilic group; forming a hydrophobic photoresist film on the adhesive layer; and patterning the photoresist film.