公开(公告)号：US20250149293A1

公开(公告)日：2025-05-08

申请号：US18747933

申请日：2024-06-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaewon Jeong ,  Dongchan Jeon ,  Kyungsun Kim ,  Sungyeol Kim ,  Yongwon Cho

IPC: H01J37/32

Abstract: A plasma generation circuit includes a high frequency power source configured to generate a first high frequency current; a current divider comprising a first capacitor and a variable capacitor and configured to divide the first high frequency current into a second high frequency current and a third high frequency current; an antenna assembly comprising a center antenna connected to the current divider and through which the second high frequency current is configured to flow, and an edge antenna connected in to the current divider and through which the third high frequency current is configured to flow, the antenna assembly being configured to induce generation of an inductively coupled plasma; a first coil coupled inductor configured to allow the second high frequency current to flow therethrough; and a second coil coupled inductor configured to allow the third high frequency current to flow therethrough and adjacent to the first coil coupled inductor.