公开(公告)号：US20140131815A1

公开(公告)日：2014-05-15

申请号：US14157914

申请日：2014-01-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong-Hee Yu ,  Bong-Seok Suh ,  Yoon-Hae Kim ,  O Sung Kwon ,  Oh-Jung Kwon

IPC: H01L23/535

CPC classification number: H01L23/535 ,  H01L21/76802 ,  H01L21/76813 ,  H01L21/76895 ,  H01L23/485 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device is provided. The semiconductor device includes: a substrate; device isolation regions formed in the substrate; an impurity region formed in a region of the substrate between every two adjacent ones of the device isolation regions; a gate electrode formed on the substrate; first and second interlayer insulating films sequentially formed on the substrate; a metal interlayer insulating film formed on the second interlayer insulating film and comprising metal wiring layers; a first contact plug electrically connecting each of the metal wiring layers and the impurity region; and a second contact plug electrically connecting each of the metal wiring layers and the gate electrode, wherein the first contact plug is formed in the first and second interlayer insulating films, and the second contact plug is formed in the second interlayer insulating film.

Abstract translation: 提供半导体器件。 半导体器件包括：衬底; 在衬底中形成的器件隔离区; 在每隔两个相邻的器件隔离区域之间形成在衬底的区域中的杂质区; 形成在所述基板上的栅电极; 顺序形成在基板上的第一和第二层间绝缘膜; 形成在所述第二层间绝缘膜上并且包括金属布线层的金属层间绝缘膜; 电连接每个金属布线层和杂质区的第一接触插塞; 以及第二接触插塞，其电连接每个所述金属布线层和所述栅电极，其中所述第一接触插塞形成在所述第一和第二层间绝缘膜中，并且所述第二接触插塞形成在所述第二层间绝缘膜中。